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Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11
Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
Kobata, Masaaki; Kobayashi, Keisuke*
Journal of the Vacuum Society of Japan, 58(2), p.43 - 49, 2015/02
We report the applications of a hard X-ray photoelectron spectroscopy to the characterization of SiO/Si(001)systems. Large escape depth of high-energy photoelectron enables us to probe buried layers and their interfaces in multilayer structures. Estimation of SiO overlayer thicknesses up to 25 nm by angle resolved XPS was possible in SiO/Si(001) samples. Determination of the thickness profile of a wedged shape SiO buried layer was successfully done in Ir (8 nm)/HfO (2.2 nm)/thickness graded-SiO (0-10 nm) / Si (100). The Si 1s core level showed a SiO thickness dependent shift, which was ascribed to fixed charge at the SiO-Si interface. Energy distribution of interface states at ultrathin thermal oxide/Si(100) interfaces were determined by Si 1 core level shift by applying gate bias in metal-oxide-semiconductor (MOS) structure with 5 nm Au gate electrodes.
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Moritani, Kosuke; Ogawa, Shuichi*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*
Shinku, 47(6), p.457 - 461, 2004/06
The oxidation reaction of Ti(0001) surface by oxygen molecules was observed by real-time in-situ photoemission spectroscopy using synchrotron radiation in the conditions of 400C and 3.710 Pa. The uptake curve of oxygen showed a plateau at the dose of 45-85 L and then increased again. This re-growth of oxide film was attributed to the drastic change of Ti oxidation state from TiO to TiO. Consequently, the characteristic change of the uptake curve was caused by the oxidation state change of Ti atoms.
Yasuda, Ryo; Nakata, Masahito; Matsubayashi, Masahito; Harada, Katsuya; Hatakeyama, Yuichi; Amano, Hidetoshi
Journal of Nuclear Materials, 320(3), p.223 - 230, 2003/08
Times Cited Count:15 Percentile:68.99(Materials Science, Multidisciplinary)Neutron radiography is one of effective tools to determine hydrided region in Zircaloy cladding tubes. In this work, the practicability of the neutron radiography for hydrogen analysis is further investigated by using standard samples with known hydrogen concentration. Local hydrogen concentration in hydrided Zircaloy tube is quantitatively estimated using the standard samples by neutron imaging plate (NIP) method. The local area is equivalent to a picture element in the image; e.g., 0.1mm0.1mm. In addition, contribution of an oxide film in the tubes to the images is investigated using oxidized samples with hydrides or no hydride. In NIP images of oxidized tube no oxide film was recognized. Numerical image analysis also shows no effect of the oxide film on the image. These results show that the influence of oxygen on image contrast can be neglected when hydrogen analysis is performed on the Zircaloy tube with oxide film and hydrides by NIP method.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06
Times Cited Count:39 Percentile:77.38(Physics, Applied)The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.
Sugiyama, Tomoyuki; Fuketa, Toyoshi
IAEA-TECDOC-1320, p.102 - 110, 2002/11
This report discusses effect of cladding surface pre-oxidation on fuel rod coolability during reactivity initiated accident (RIA) conditions. NSRR irradiated fuel experiments had shown cladding surface temperature lower than fresh fuel experiments. One possible speculation for the temperature difference is that oxide layer at the cladding outer surface enhanced heat transfer. To verify the speculation, pulse irradiation tests were performed on fuel rods with three different surface conditions: without oxide layer, with 1m-thick and 10m-thick oxide layer. Transient records of the cladding surface temperature showed the critical heat flux and the minimum heat flux increased for the oxidized fuel rods. These effects depend on presence of the oxide layer, not on the thickness of the layer, because no difference existed between results from 1m and 10m rods.
Tomioka, Yuichi*; Iida, Takeshi*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Yoshimoto, Kimihiro*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ishida, Yuki*; Kosugi, Ryoji*; et al.
Materials Science Forum, 389-393, p.1029 - 1032, 2002/00
Times Cited Count:4 Percentile:20.3(Materials Science, Multidisciplinary)no abstracts in English
Lee, K. K.; Nishijima, Toshiji*; Oshima, Takeshi; Jamieson, D. N.*
Nuclear Instruments and Methods in Physics Research B, 181(1-4), p.324 - 328, 2001/07
Times Cited Count:5 Percentile:38.96(Instruments & Instrumentation)Investigation of oxide charge trapping and interface state generation in SiO grown on 6H-SiC was performed using ion beam induced charge (IBIC), electroluminescence (EL) and the high frequency capacitance-voltage (CV) method. A large flatband voltage shift in CV measurements indicated a high density of positive charges trapped near the SiC/SiO interface. These trapped charges were related to defects either existing in the oxide or generated during alpha particle irradiation. EL indicated trap levels at 1.36, 1.6, 2.3 and 2.9 eV. Levels at 1.36 and 2.3 eV are defects existing in the SiC substrate, while the other two remaining levels are due to defects in the oxide. These defects affected the radiation hardness of SiC electronic devices. Oxide rupture caused by alpha particle irradiation of the metal-oxide-p-type SiC device is observed.
Yasuda, Ryo; Nakata, Masahito; Matsubayashi, Masahito; Harada, Katsuya; Ando, Hitoshi*
JAERI-Tech 2000-082, 38 Pages, 2001/02
no abstracts in English
Sakai, Takaaki; *; Ohshima, Hiroyuki; Yamaguchi, Akira
JNC TN9400 2000-033, 94 Pages, 2000/04
The feasibility study on several concepts for the commercial fast breeder reactor(FBR) in future has been conducted in JNC for the kinds of possible coolants and fuel types to confirm the direction of the FBR developments in Japan. ln this report, Lead and Lead-Bismuth eutectic coolants were estimated for the decay heat removal characteristics by the comparison with sodium coolant that has excellent features for the heat transfer and heat transport performance. Heavy liquid metal coolants, such as Lead and Lead-Bismuth, have desirable chemical inertness for water and atmosphere. Therefore, there are many economical plant proposals without an intermediate heat transport system that prevents the direct effect on a reactor core by the chemical reaction between water and the liquid metal coolant at the hypocritical tube fairer accidents in a steam generator. ln this study, transient analyses on the thermal-hydraulics have been performed for the decay heat removal events in "Equivalent plant" with the Lead, Lead-Bismuth and Sodium coolant by using Super-COPD code. And a resulted optimized lead cooled plant in feasibility study was also analyzed for the comparison. ln conclusion, it is become clear that the natural circulation performance, that has an important roll in passive safety characteristic of the reactor, is more excellent in heavy liquid metals than sodium coolant during the decay heat removal transients. However, we need to conform the heat transfer reduction by the oxidize film or the corrosion products expected to appear on the heat transfer surface in the Lead and Lead-Bismuth circumstance.
Takeda, Tetsuaki; Iwatsuki, Jin*; Inagaki, Yoshiyuki; Ogawa, Masuro
Nihon Genshiryoku Gakkai-Shi, 42(3), p.204 - 211, 2000/03
Times Cited Count:2 Percentile:19.43(Nuclear Science & Technology)no abstracts in English
Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito
IEEE Transactions on Nuclear Science, 46(6), p.1578 - 1585, 1999/12
Times Cited Count:23 Percentile:83.04(Engineering, Electrical & Electronic)no abstracts in English
Takeda, Tetsuaki; Iwatsuki, Jin*; Inagaki, Yoshiyuki; Ogawa, Masuro
Proceedings of 7th International Conference on Nuclear Engineering (ICONE-7) (CD-ROM), 10 Pages, 1999/00
no abstracts in English
Saito, Kazunari; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, Kazunori*
JAERI-Conf 97-003, p.243 - 248, 1997/03
no abstracts in English
Nakata, Masahito; Amano, Hidetoshi; ; Nishi, Masahiro; Nakamura, Jinichi; Furuta, Teruo; ;
HPR-345, 0, 9 Pages, 1995/00
no abstracts in English
*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*
Denshi Joho Tsushin Gakkai Gijutsu Kenkyu Hokoku, 93(172), p.23 - 27, 1993/07
no abstracts in English
Furuta, Teruo
Genshiryoku Kogyo, 39(5), p.44 - 49, 1993/00
no abstracts in English